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TECHNICAL PAPERS

Static and Dynamic Analysis of Carbon Nanotube-Based Switches

[+] Author and Article Information
Marc Dequesnes, Zhi Tang, N. R. Aluru

Department of Mechanical and Industrial Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, IL 61801

J. Eng. Mater. Technol 126(3), 230-237 (Jun 29, 2004) (8 pages) doi:10.1115/1.1751180 History: Received June 20, 2003; Revised March 01, 2004; Online June 29, 2004
Copyright © 2004 by ASME
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References

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Dequesnes,  M., Rotkin,  S. V., and Aluru,  N. R., 2002, “Calculation of Pull-In Voltages for Carbon Nanotube-Based Nanoelectromechanical Switches,” Nanotechnology, 13, pp. 120–131.
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Figures

Grahic Jump Location
Force balance for a nanotube over a ground plane: (a) position of the tube when V=0; and (b) deformed position of the tube when V≠0
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van der Waals integration of a SWNT over a graphite ground plane
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Raman spectra of a 20.7 nm length (10,10) tube in molecular dynamics. Inset is the spectra in the tangential stretch G-band modes region of the nanotube.
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Test configurations for the extraction of material properties: (a) tensile load for the extraction of AE; and (b) bending load for the extraction of EI
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Decomposition of a sample geometry into overlapping subdomains
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Pull-in voltage analysis of a 20.7 nm long (10,10) fixed-fixed SWNT with a gap of 1 nm
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Pull-in voltage analysis of a 20.7 nm long (10,10) fixed-fixed SWNT with a gap of 2 nm
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Pull-in voltage analysis of a 20.7 nm long (10,10) fixed-fixed SWNT with a gap of 3 nm
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Deformation plot of a fixed-fixed carbon nanotube NEM switch. The top figure is the result from full MD simulation, and the lower figure is the multiscale result in which the middle region is approximated by the one-dimensional nonlinear beam theory. Note that the applied voltage is 19 V, and the initial gap between the tube and the ground plane is 3 nm.
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Pull-in analysis of a 20.7 nm long (10,10) fixed-fixed SWNT with a gap of 3 nm
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Pull-in voltage analysis of a 20.7 nm long (10,10) cantilever SWNT with a gap of 3 nm. The results with linear and nonlinear theory are identical.
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Influence of van der Waals forces on the pull-in voltage of a 20.7 nm long (10,10) fixed-fixed SWNT with a gap of 1 nm. The contact when considering van der Waas forces occurs around 0.34 nm due to the van der Waals contact distance.
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Pull in time analysis of a 20.7 nm long (10,10) fixed-fixed SWNT with a gap of 1 nm. The applied voltage is 1.97 V.
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Fundamental frequency analysis of a 20.7 nm long (10,10) fixed-fixed SWNT with a gap of 1 nm
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Fundamental frequency analysis of a 20.7 nm long (10,10) fixed-fixed SWNT with a gap of 3 nm
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Influence of van der Waals forces on the fundamental frequency of a 20.7 nm long (10,10) fixed-fixed SWNT with a gap of 1 nm

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