A Study of Creep in Polysilicon MEMS Devices

[+] Author and Article Information
K. Tuck, A. Jungen, A. Geisberger, M. Ellis, G. Skidmore

Zyvex Corporation, 1321 North Plano Road, Richardson, Texas 75081

J. Eng. Mater. Technol 127(1), 90-96 (Feb 22, 2005) (7 pages) doi:10.1115/1.1839214 History: Received January 27, 2004; Revised June 23, 2004; Online February 22, 2005
Copyright © 2005 by ASME
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Measured elongation within test beams (3 stress levels, ∼1300 K) for one minute
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Measured elongation (4 temperatures, stress ∼89 MPa) for one minute
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SEM image of ROI illustrating the grain size difference from the central region to one end
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SEM image of beams after failure to conduct due to dopant migration or oxidation
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SEM image of two beams having undergone mechanical failure, illustrating ductile separation
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Measured elongation within test beams (3 stress levels ∼1300 K) until failure
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Images showing the beams experiencing plastic deformation in the ROI (notch 1, 2, 3)
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General Ashby map relating mechanisms of deformation 16
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Polysilicon micro test device used to study creep behavior at high temperatures
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SEM image of the region of interest subject to high temperatures and stresses
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SEM image of polysilicon springs which apply continuous force
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A typical creep curve illustrating three stages of creep in polysilicon
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U-beam thermal actuator simulation results compared with measured data for (top) static displacement versus power; and (bottom) transient displacement for a 10%, 20%, and 30% duty cycle 7 V pulse at 1 KHz



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