Theoretical and Experimental Characterization for the Inelastic Behavior of the Micro-/Nanostructured Thin Films Using Strain Gradient Plasticity With Interface Energy

[+] Author and Article Information
George Z. Voyiadjis

Department of Civil and Environmental Engineering, Louisiana State University, Baton Rouge, LA 70803voyiadjis@eng.lsu.edu

Babur Deliktas

Department of Civil Engineering, Mustafa Kemal University, Iskenderun, Hatay 31200, Turkeybdelik1@lsu.edu

J. Eng. Mater. Technol 131(4), 041202 (Aug 27, 2009) (15 pages) doi:10.1115/1.3183774 History: Received January 16, 2009; Revised May 18, 2009; Published August 27, 2009

Thin film technology is pervasive in many applications, including microelectronics, optics, magnetic, hard and corrosion resistant coatings, micromechanics, etc. Therefore, basic research activities will be necessary in the future to increase knowledge and understanding and to develop predictive capabilities for relating fundamental physical and chemical properties to the microstructure and performance of thin films in various applications. In basic research, special model systems are needed for quantitative investigation of the relevant and fundamental processes in thin film material science. Because of the diversity of the subject and the sheer volume of the publications, a complete a review of the area of the current study is focused particularly on the experimental and theoretical investigations for the inelastic behavior of the micro-/nanostructured thin films.

Copyright © 2009 by American Society of Mechanical Engineers
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Figure 1

A constrained crystalline strip with multiple symmetric double slip systems subjected to the simple shear

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Figure 6

(a) Displacements from equilibrium and (b) stresses as a function of the depth (along z) from the top of the nanopixel. The directions denoted here are x: [−211], y: [0–11], z(111). Displacements and stresses are plotted on a vertical line that passes through x=0, y=d/4 and x=0, y=0 respectively, where d=25 nm is the pixel width and its center is at x=y=0. The hand shake region (dashed lines) is about 3 nm below the top of the Si substrate, or, about 4 nm below the Si/Si3N4 interface (dotted line) (88-89).

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Figure 2

Ideal plastic case where (ho=0) at various length scales (H/ℓ=1,5,10,15,20,25,30). Crystal strip has two slip systems with (θ1=60, θ2=−60), G=26,300 MPa, γo=0.01, ℓdis=0, and N=1.

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Figure 3

Comparison of the two models for (a) plastic slip versus r and (b) shear stress versus r at the location of x2=H/2. Crystal strip has two slip systems with (θ1=60, θ2=−60), G=26,300 MPa, ho=50 MPa, γo=0.01, Υ=0.1, ℓdis=0 and N=1.

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Figure 4

Shear stress distribution versus orientation of the two symmetric slip systems at various length scales (H/ℓ=1,10,25,50,55). Other parameters used are G=26,300 MPa, ho=50 MPa, γo=0.01, Υ=0.1, ℓdis=0, and N=1.

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Figure 5

(a) A schematic of the Si/Si3N4 nanopixel. The two-dimensional projection shows Si3N4 and Si in dark gray and light gray, respectively. Above and below the HS region (denoted by the dotted line), MD and FE apply, respectively. (b) Closeup of the HS region and its surroundings in the Si substrate showing 2D views from two different directions (88).



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