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Research Papers

Coupled Interfacial Energy and Temperature Effects on Size-Dependent Yield Strength and Strain Hardening of Small Metallic Volumes

[+] Author and Article Information
Rashid K. Abu Al-Rub1

Zachry Department of Civil Engineering, Texas A&M University, College Station, TX 77843rabualrub@civil.tamu.edu

Abu N. M. Faruk

Zachry Department of Civil Engineering, Texas A&M University, College Station, TX 77843

1

Corresponding author.

J. Eng. Mater. Technol 133(1), 011017 (Dec 03, 2010) (7 pages) doi:10.1115/1.4002651 History: Received March 17, 2010; Revised August 12, 2010; Published December 03, 2010; Online December 03, 2010

Plasticity in heterogeneous metallic materials with small volumes is governed by the interactions of dislocations at interfaces. In particular, interfaces of a material confined in a small volume can strongly affect the mechanical properties of micro and nanosystems. In this paper, the framework of higher-order strain gradient plasticity theory with interfacial energy effect is used to investigate the coupling of interfacial energy with temperature and how it affects the initial yield strength (i.e., onset of plasticity) and the strain hardening rates of confined small metallic volumes. It is postulated that the interfacial energy decreases as temperature increases such that size effect decreases as temperature increases. As an application, the size effect of thermal loading of a film-substrate system is investigated. It is shown that the temperature at which the film starts to yield plastically is size-dependent, which is attributed to the size-dependent yield strength. Furthermore, the flow stress is more temperature sensitive as the size decreases.

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Figures

Grahic Jump Location
Figure 1

An elastoplastic thin film of thickness d on an elastic substrate

Grahic Jump Location
Figure 2

Thermal cooling of an aluminum-silicon thin film-substrate system by 200 K due to interfacial yield strength only (δ1=0.35 and δ2=0). Different film thicknesses are represented by ℓ/d=0.1, 0.5, 1, 1.5, and 2 for: (a) average stress versus strain, (b) average stress and temperature, (c) plastic strain through the thickness, and (d) stress through the thickness.

Grahic Jump Location
Figure 3

Thermal cooling of an aluminum-silicon thin film-substrate system by 200 K due to interfacial hardening only (δ1=0 and δ2=50). Different film thicknesses are represented by ℓ/d=0.1, 0.5, 1, 1.5, and 2 for: (a) average stress versus strain, (b) average stress and temperature, (c) plastic strain through the thickness, and (d) stress through the thickness.

Grahic Jump Location
Figure 4

Thermal cooling of an aluminum-silicon thin film-substrate system by 200 K due to both interfacial yield strength and hardening (δ1=δ2=0.5). Different film thicknesses are represented by ℓ/d=0.1, 0.5, 1, 1.5, and 2 for: (a) average stress versus strain, (b) average stress and temperature, (c) plastic strain through the thickness, and (d) stress through the thickness.

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