Research Papers

Mechanical Behavior of Silicon Carbide Under Static and Dynamic Compression

[+] Author and Article Information
D. Zhang, A. Roy

Wolfson School of Mechanical,
Electrical and Manufacturing Engineering,
Loughborough University,
Loughborough LE11 3TU, UK

L. G. Zhao

Wolfson School of Mechanical,
Electrical and Manufacturing Engineering,
Loughborough University,
Loughborough LE11 3TU, UK
e-mail: L.Zhao@Lboro.ac.uk

1Corresponding author.

Contributed by the Materials Division of ASME for publication in the JOURNAL OF ENGINEERING MATERIALS AND TECHNOLOGY. Manuscript received February 20, 2018; final manuscript received May 16, 2018; published online July 18, 2018. Assoc. Editor: Vikas Tomar.

J. Eng. Mater. Technol 141(1), 011007 (Jul 18, 2018) (10 pages) Paper No: MATS-18-1047; doi: 10.1115/1.4040591 History: Received February 20, 2018; Revised May 16, 2018

This paper compared the mechanical behavior of 6H SiC under quasi-static and dynamic compression. Rectangle specimens with a dimension of 3 × 3 × 6 mm3 were used for quasi-static compression tests under three different loading rates (i.e., 10−5/s, 10−4/s, and 10−3/s). Stress–strain response showed purely brittle behavior of the material which was further confirmed by scanning electron microscopy (SEM)/transmission electron microscopy (TEM) examinations of fractured fragments. For dynamic compression, split Hopkinson pressure bar (SHPB) tests were carried out for cubic specimens with a dimension of 6 × 6 × 4 mm3. Stress–strain curves confirmed the occurrence of plastic deformation under dynamic compression, and dislocations were identified from TEM studies of fractured pieces. Furthermore, JH2 model was used to simulate SHPB tests, with parameters calibrated against the experimental results. The model was subsequently used to predict strength and plasticity-related damage under various dynamic loading conditions. This study concluded that, under high loading rate, silicon carbide (SiC) can deform plastically as evidenced by the development of nonlinear stress–strain response and also the evolution of dislocations. These findings can be explored to control the brittle behavior of SiC and benefit end users in relevant industries.

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Reddy, J. D. , Volinsky, A. A. , Frewin, C. L. , Locke, C. , and Saddow, S. E. , 2007, “ Mechanical Properties of 3C-SiC Films for MEMS Applications,” MRS Proc., 1049, p. AA03-06.
Sarro, P. M. , 2000, “ Silicon Carbide as a New MEMS Technology,” Sens. Actuators A: Phys., 82(1–3), pp. 210–218. [CrossRef]
Frischmuth, T. , Schneider, M. , Maurer, D. , Grille, T. , and Schmid, U. , 2016, “ Inductively-Coupled Plasma-Enhanced Chemical Vapour Deposition of Hydrogenated Amorphous Silicon Carbide Thin Films for MEMS,” Sens. Actuators A: Phys., 247, pp. 647–655. [CrossRef]
Tamura, T. , Nakamura, T. , Takahashi, K. , Araki, T. , and Natsumura, T. , 2005, “ Research of CMC Application to Turbine Components,” IHI Eng. Rev., 38(2), pp. 58–62. http://citeseerx.ist.psu.edu/viewdoc/download?doi=
Bian, G. , and Wu, H. , 2015, “ Friction and Surface Fracture of a Silicon Carbide Ceramic Brake Disc Tested against a Steel Pad,” J. Eur. Ceram. Soc., 35(14), pp. 3797–3807. [CrossRef]
Venkatesan, J. , Iqbal, M. A. , and Madhu, V. , 2017, “ Ballistic Performance of Bilayer Alumina Aluminium and Silicon Carbide Aluminium Armours,” Procedia Eng., 173, pp. 671–678. [CrossRef]
Crouch, I. G. , Kesharaju, M. , and Nagarajah, R. , 2015, “ Characterisation, Significance and Detection of Manufacturing Defects in Reaction Sintered Silicon Carbide Armour Materials,” Ceram. Int., 41(9), pp. 11581–11591. [CrossRef]
Tomono, K. , Furuya, H. , Miyamoto, S. , Okamura, Y. , Sumimoto, M. , Sakata, Y. , Komatsu, R. , and Nakayama, M. , 2013, “ Investigations on Hydrobromination of Silicon in the Presence of Silicon Carbide Abrasives as a Purification Route of Kerf Loss Waste,” Sep. Purif. Technol., 103, pp. 109–113. [CrossRef]
Lankford, J. , 1981, “ Mechanisms Responsible for Strain-Rate-Dependent Compressive Strength in Ceramic Materials,” J. Am. Ceram. Soc., 64(2), pp. C-33–C-34. [CrossRef]
Nemat-Nasser, S. , and Deng, H. , 1994, “ Strain-Rate Effect on Brittle Failure in Compression,” Acta Metall. Et Mater., 42(3), pp. 1013–1024. [CrossRef]
Sarva, S. , and Nemat-nasser, S. , 2001, “ Dynamic Compressive Strength of Silicon Carbide Under Uniaxial Compression,” Mater. Sci. Eng.:A, 317(1–2), pp. 140–144. [CrossRef]
Garkushin, G. V. , Razorenov, S. V. , Rumyantsev, V. I. , and Savinykh, A. S. , 2014, “ Dynamic Strength of Reaction-Sintered Silicon Carbide Ceramics,” Mech. Solids, 49(6), pp. 616–622. [CrossRef]
Holland, C. C. , and McMeeking, R. M. , 2015, “ The Influence of Mechanical and Microstructural Properties on the Rate-Dependent Fracture Strength of Ceramics in Uniaxial Compression,” Int. J. Impact Eng., 81, pp. 34–49. [CrossRef]
Pittari, J. , Subhash, G. , Zheng, J. , Halls, V. , and Jannotti, P. , 2015, “ The Rate-Dependent Fracture Toughness of Silicon Carbide- and Boron Carbide-Based Ceramics,” J. Eur. Ceram. Soc., 35(16), pp. 4411–4422. [CrossRef]
Castaing, J. , Cadoz, J. , and Kirby, S. H. , 1981, “ Prismatic Slip of Al2O3 Single Crystals below 1000 °C in Compression Under Hydrostatic Pressure,” J. Am. Ceram. Soc., 64(9), pp. 504–511. [CrossRef]
Lankford, J. , 1981, “ Temperature-Strain Rate Dependance of Compressive Strength and Damage Mechanisms in Aluminium Oxide,” J. Mater. Sci., 16(6), pp. 1567–1578. [CrossRef]
Louro, L. H. L. , and Meyers, M. A. , 1989, “ Effect of Stress State and Microstructural Parameters on Impact Damage of Alumina-Based Ceramics,” J. Mater. Sci., 24(7), pp. 2516–2532. [CrossRef]
Chen, W. , and Ravichandran, G. , 1996, “ Static and Dynamic Compressive Behavior of Aluminum Nitride Under Moderate Confinement,” J. Am. Ceram. Soc., 79(3), pp. 579–584. [CrossRef]
Wananuruksawong, R. , Shinoda, Y. , Akatsu, T. , and Wakai, F. , 2015, “ High-Strain-Rate Superplasticity in Nanocrystalline Silicon Nitride Ceramics Under Compression,” Scr. Mater., 103, pp. 22–25. [CrossRef]
ASTM International, 2015, “ Standard Test Method for Monotonic Compressive Strength of Advanced Ceramics at Ambient Temperature,” ASTM International, West Conshohocken, PA, Standard No. ASTM C1424-15. https://www.astm.org/Standards/C1424.htm
Kolsky, H. , 1949, “ An Investigation of Mechanical Properties of Material at Very High Rates of Loading,” Proc. Phys. Soc., Sect. B, 62(11), pp. 676–700.
Frew, D. J. , Forrestal, M. J. , and Chen, W. , 2001, “ A Split Hopkinson Pressure Bar Technique to Determine Compressive Stress-Strain Data for Rock Materials,” Exp. Mech., 41(1), pp. 40–46. [CrossRef]
Cronin, D. S. , Bui, K. , Kaufmann, C. , Mcintosh, G. , Berstad, T. , and Cronin, D. , 2003, “ Implementation and Validation of the Johnson-Holmquist Ceramic M Aterial Model in LS-DYNA,” Fourth European LS-DYNA Users Conference, Ulm, Germany, May 23–24, pp. 47–60.
Johnson, G. R. , and Holmquist, T. J. , 1992, “ ‘A Computational Constitutive Model for Brittle Materials Subjected to Large Strains, High Strain Rates and High Pressures’,” Shock-Wave and High-Strain-Rate Phenomena in Materials, M. A. Meyers , L. E. Muir , and K. P. Staudhammer , eds., Marcel Dekker, New York, pp. 1075–1081.
Johnson, G. R. , and Holmquist, T. J. , 1994, “ An Improved Computational Constitutive Model for Brittle Materials,” Am. Inst. Phys., 309(1), pp. 981–984.
Hayun, S. , Paris, V. , Mitrani, R. , Kalabukhov, S. , Dariel, M. P. , Zaretsky, E. , and Frage, N. , 2012, “ Microstructure and Mechanical Properties of Silicon Carbide Processed by Spark Plasma Sintering (SPS),” Ceram. Int., 38(8), pp. 6335–6340. [CrossRef]
Forquin, P. , Denoual, C. , Cottenot, C. E. , and Hild, F. , 2003, “ Experiments and Modelling of the Compressive Behaviour of Two SiC Ceramics,” Mech. Mater., 35(10), pp. 987–1002. [CrossRef]
Shin, C. J. , Meyers, M. A. , Nesterenko, V. F. , and Chen, S. J. , 2000, “ Damage Evolution in Dynamic Deformation of Silicon Carbide,” Acta Mater., 48(9), pp. 2399–2420. [CrossRef]
Hu, G. , Chen, C. Q. , Ramesh, K. T. , and McCauley, J. W. , 2012, “ Mechanisms of Dynamic Deformation and Dynamic Failure in Aluminium Nitride,” Acta Mater., 60(8), pp. 3480–3490. [CrossRef]
Wang, Z. , and Li, P. , 2015, “ Dynamic Failure and Fracture Mechanism in Alumina Ceramics: Experimental Observations and Finite Element Modelling,” Ceram. Int., 41(10), pp. 12763–12772. [CrossRef]
Zhou, Y. C. , He, L. F. , Lin, Z. J. , and Wang, J. Y. , 2013, “ Synthesis and Structure–Property Relationships of a New Family of Layered Carbides in Zr-Al(Si)-C and Hf-Al(Si)-C Systems,” J. Eur. Ceram. Soc., 33(15–16), pp. 2831–2865. [CrossRef]
Stevens, R. , 1972, “ Defects in Silicon Carbide,” J. Mater. Sci., 7(5), pp. 517–521. [CrossRef]
Maeda, K. , Suzuki, K. , Fujita, S. , Ichihara, M. , and Hyodo, S. , 1988, “ Defects in Plastically Deformed 6H-SiC Single Crystal Studied by Transmission Electron Microscopy,” Philos. Mag. A: Phys. Condens. Matter, Struct., Defects Mech. Prop., 57(4), pp. 573–592.
Weertman, J. , and Weertman, J. R. , 1992, ‘Elementary Dislocation Theory, Oxford University Press, New York, p. 98.
Holmquist, T. J. , and Johnson, G. R. , 2002, “ Response of Silicon Carbide to High Velocity Impact Response of Silicon Carbide to High Velocity Impact,” J. Appl. Phys., 91(9), pp. 5858–5866. [CrossRef]


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Fig. 1

Microstructure of 6H-SiC as received

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Fig. 2

(a) As-received SiC tile and (b) prepared specimen with a strain gauge mounted

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Fig. 3

Schematic of the compression test setup

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Fig. 4

A schematic of SHPB system

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Fig. 5

Flowchart of the JH2 model

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Fig. 6

Stress–strain curves from quasi-static and SHPB compression experiments

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Fig. 7

SEM images of fragments collected from (a) to (b) quasi-static and (c) to (d) dynamic compression tests

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Fig. 8

TEM images of lift-out lamella from fragments collected after quasi-static compression test

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Fig. 9

TEM images of lift-out lamella from fragments collected after SHPB tests: (a)-(b) 500/s, (c)-(d) 1000/s, and (e)-(f) 2000/s strain rate

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Fig. 10

Comparison of stress–strain curves obtained from JH2 model and SHPB tests

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Fig. 11

Compressive strength of 6H-SiC against loading rate

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Fig. 12

Contour plots of (a)-(b) damage (SDV4) and (c)-(d) equivalent plastic strain (SDV1) at the moment of failure for 4000/s (left) and 500/s (right) loading rates, respectively



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