Electromigration (EM) in solder joints under high current density has become a critical reliability issue for the future high density microelectronic packaging. This paper presents atomic density redistribution algorithm for predicting electromigration induced void nucleation and growth in solder joints of Chip Scale Package (CSP) structure. The driving force for electromigration induced failure considered here includes the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient, which were neglected in many of the existing studies on electromigration. The simulation results for void generation and time to failure (TTF) are discussed and correlated with the previous test results. EM sensitivity analysis is also performed to investigate the effect of EM parameters and mechanical properties of material on electromigration failure. The simulation results indicated that the atomic density on the activation energy is quite sensitive, and the mechanical material parameters have no impact on EM sensitivity of normalized atomic density.
References
1.
Lin
M.
, and Basaran
C.
, 2005, “Electromigration Induced Stress Analysis Using Fully Coupled Mechanical–Diffusion Equations With Nonlinear Material Properties
”, Comput. Mater. Sci.
, 34
(1
), pp. 82
–98
.2.
Basaran
, C.
, and Lin
, M.
, 2007, “Electromigration Induced Strain Field Simulations for Nanoelectronics Lead-Free Solder Joints
”, Int. J. Solids Struct.
, 44
(14–15
), pp. 4909
–4924
.3.
Basaran
, C.
, and Lin
, M.
, 2008, “Damage Mechanics of Electromigration Induced Failure
”, Mech. Mater.
, 40
(1–2
), pp. 66
–79
.4.
Dalleau
, D.
, and Weide-Zaage
, K.
, 2001, “Three-dimensional Voids Simulation in Chip-level Metallization Structures: A Contribution to Reliability Evaluation
”, Microelectron. Reliab.
, 41
(9–10
), pp. 1625
–1630
.5.
Dalleau
, D.
, 2003, “3D Time-Depending Simulation of Void Formation in Metallization Structures
”, Ph.D. thesis, University of Hannover, Hannover.6.
Weide-Zaage
, K.
, Dalleau
, D.
, and Yu
, X. B.
, 2003, “Static and Dynamic Analysis of Failure Locations and Void Formation in Interconnects Due to Various Migration Mechanisms
”, Mater. Sci. Semicond. Process.
, 6
(1–3
), pp. 85
–92
.7.
Tu
, K. N.
, 2003, “Recent Advances on Electromigration in Every-Large-Scale-Integration of Interconnects
”, J. Appl. Phys.
, 94
(9
), pp. 5451
–5473
.8.
Korhonen
, M. A.
, Borgesen
, P.
, Tu
, K. N.
, and Li
, C. Y.
, 1993, “Stress Evolution Due to Electromigration in Confined Metal Lines
”, J. Appl. Phys.
, 73
(8
), pp. 3790
–3799
.9.
Lloyd
, J. R.
, Shatzkes
, M.
, and Challaner
, D. C.
, 1988, “Kinetic Study of Electromigration Failure in Cr/Al–Cu Thin Film Conductors Covered With Polyimide and the Problem of the Stress Dependent Activation Energy
”, Proceedings 26th Annual Reliability Physics Symposium
, pp. 216
–225
.10.
Tan
, C. M.
, and Roy
, A.
, 2006, “Investigation of the Effect of Temperature and Stress Gradients on Accelerated EM Test for Cu Narrow Interconnects
”, Thin Solid Films
, 504
(1–2
), pp. 288
–293
.11.
Lloyd
, J. R.
, 1999, “Electromigration and Mechanical Stress
”, Microelectron. Eng.
, 49
(1–2
), pp. 51
–64
.12.
Tan
, C. M.
, and Roy
, A.
, 2006, “Investigation of the Effect of Temperature and Stress Gradients on Accelerated EM Test for Cu Narrow Interconnects
”, Thin Solid Films
, 504
(1–2
), pp. 288
–293
.13.
Liu
, Y.
, Liang
, L. H.
, Irving
, S.
, and Luk
, T.
, 2008, “3D Modeling of Electromigration Combined With Thermal-Mechanical Effect for IC Devices and Package
”, Microelectron. Reliab.
, 48
(6
), pp. 811
–824
.14.
Tan
, C. M.
, Hou
, Y. J.
, and Li
, W.
, 2007, “Revisit to the Finite Element Modeling of Electromigration for Narrow Interconnects
”, J. Appl. Phys.
, 102
(3
), pp. 033705
.15.
Jing
, J. P.
, Liang
, L. H.
, and Guang
, M.
, 2010, “Electromigration Simulation for Metal Lines
”, ASME J Electron. Packag.
, 132
(1
), pp. 1
–7
.16.
Reddy
, J. N.
, 2006, An Introduction to the Finite Element Method,
3rd ed., McGraw-Hill
, New York
.17.
Clement
, J. J.
, 1992, Vacancy Supersaturation Model for Electromigration Failure Under DC and Pulsed DC Stress
,” J. Appl. Phys.
, 71
(9
), pp. 4264
–4268
.18.
Gee
, S.
, Kelkar
, N.
, Huang
, J.
, and Tu
, K. N.
, 2005, “Lead-Free and PbSn Bump Electromigration Testing
”, Proceedin InterPACK2005
, pp. 73417
.19.
Gee
, S.
, Nguyen
, L.
, Huang
, J.
, and Tu
, K. N.
, 2005, “Mean Time To Failure in Wafer Level-CSP Packages with SnPb and SnAgCu Solder Bumps
”, Proceedings 2nd International Wafer-Level Packaging Congress
, pp. 159
–167
.20.
Darveaux
, R.
, 2002, “Effect of Simulation Methodology on Solder Joint Crack Growth Correlation and Fatigue Life Prediction
”, ASME J. Electron. Packag.
, 124
(3
), pp. 147
–152
.21.
Lai
, Y. S.
, Chen
, K. M.
, Kao
, C. L.
, Lee
, C. W.
, and Chiu
, Y. T.
, 2007, “Electromigration of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu Composite Flip–Chip Solder Bumps With Ti/Ni(V)/Cu Under Bump Metallurgy
”, Microelectron. Reliab.
, 47
(8
), pp. 1273
–1279
.22.
Gan
, H.
, Choi
, W. J.
, Xu
, G.
, and Tu
, K. N.
, 2002, “Electromigration in Solder Joints and Solder Lines
”, J. Miner. Met. Mater. Soc.
, 54
(6
), pp. 34
–37
.23.
Chiang
, K. N.
, and Lee
, C. C.
, 2006, “Current Crowding-Induced Electromigration in SnAg3.0Cu0.5 Micro Bumps
”, J. Appl. Lett.
, 88
(7
), pp. 072102
.24.
Liu
, Y.
, Zhang
, Y. X.
, and Liang
, L. H.
, 2010, “Prediction of Electromigration Induced Voids and Time to Failure for Solder Joint of a Wafer Level Chip Scale Package
”, IEEE Trans. Compon. Packag. Technol.
, 33
(3
), pp. 544
–552
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