Fig. 1 IDEF-0 representation of the model proposed for finding the optimal process plans in HM More

Fig. 2 Description of the part studied in Case-I More

Fig. 3 ( a ) The input part used for producing the final part and ( b ) the final part More

Fig. 4 Four instances studied in Case II: ( a ) Real part studied in Case-IIA, ( b ) the part studied in Case-IIB, ( c ) the part studied in Case-IIC, ( d ) the part studied in Case-IID More

Fig. 1 The PCMP experimental device of diamond: ( a ) main view, ( b ) UV lamp, ( c ) processing view, and ( d ) schematic diagram of PCMP More

Fig. 2 The PCMP simulation model of diamond More

Fig. 3 The surface morphology and MRR of diamond after machining: ( a ) the 2D surface morphology obtained via Zygo after CMP with a measurement range of 868 μ m × 868 μ m, ( b ) the 2D surface morphology obtained via Zygo after PCMP with a measurement range of 868 μ m × 868 μ m, ( c ) the rou... More

Fig. 4 AFM morphology of diamond after PCMP: Ra = 0.071 nm, RMS = 0.090 nm, Rz = 0.943 nm with a measurement range of 1.5 μ m × 1.5 μ m: ( a ) 2D morphology and ( b ) 3D morphology More

Fig. 5 XPS spectra of C1s of diamond under different etching depths: ( a ) etching depths = 0, ( b ) etching depths = 0.5 nm, and ( c ) etching depths = 1 nm More

Fig. 6 HRTEM image of polished diamond surface More

Fig. 7 Variations of internal energy in the diamond substrate before and after UV irradiation: ( a ) potential energy of carbon atoms and ( b ) bond energy of C-C bonds More

Fig. 8 Charge curves of the carbon atom derived from the diamond substrate during •OH adsorption More

Fig. 9 Evolutions of C-C bond order during the carbon atom removal process More

Fig. 10 Curves of the number of C-O-C and C-C interfacial bridge bonds formed during PCMP More

Fig. 11 The schematics of PCMP removal mechanism More